Alternate color or configuration shownTranscend MTE710T M.2 256 GB PCI Express 4.0 3D NAND NVMeTranscend MTE710T. SSD capacity: 256 GB, SSD form factor: M.2, Read speed: 3800 MB/s, Write speed: 3200 MB/s, Component for: PCManufacturer: Transcend SKU: 6701684Manufacturer part number: TS256GMTE710TPrice: $376.43 Qty: Add to cart Custom wishlist OKAdd to wishlistAdd to compare listEmail a friendTranscend's M.2 SSD MTE710T features the PCI Express (PCIe) Gen 4 x4 interface and is compatible with NVM Express (NVMe) 1.4 specifications to achieve never-before-seen transfer speeds. The MTE710T features state-of-the-art 3D NAND technology, which allows 112 layers of 3D NAND flash chips to be vertically stacked. Compared to 3D NAND at 96 layers, this density breakthrough greatly improves storage efficiency, and its built-in DRAM cache allows faster access. Applied with 30µ" gold finger PCB and Corner Bond technology, the MTE710T is fully tested in-house to guarantee reliability in mission-critical applications, boasting an endurance rating of 3K Program/Erase cycles and an extended operating temperature ranging from -20℃~75℃. Transcend also offers the MTE710T-I with wide temperature (-40℃ ~ 85℃) capabilities to ensure sustained functionality and optimal reliability. Supports NVM commandSLC caching technologyDynamic thermal throttlingBuilt-in LDPC ECC (Error Correction Code) functionalityAdvanced Global Wear-Leveling and Block management for reliabilityAdvanced Garbage CollectionSupports S.M.A.R.T. function to conduct health monitoring, analysis, and reporting for storage devicesTRIM command for better performanceFull drive encryption with Advanced Encryption Standard (AES) (optional)Compliant with RoHS 2.0 standardsCompliant with PCI Express specification 3.1Compliant with NVM Express specification 1.4Space-saving M.2 form factor (80mm) – ideal for mobile computing devicesPCIe Gen 4 x4 interfaceDDR4 DRAM Cache embeddedEndurance: 3K P/E cycles (Program/Erase cycles) guaranteedOverviewSpecificationsContact UsTranscend's M.2 SSD MTE710T features the PCI Express (PCIe) Gen 4 x4 interface and is compatible with NVM Express (NVMe) 1.4 specifications to achieve never-before-seen transfer speeds. The MTE710T features state-of-the-art 3D NAND technology, which allows 112 layers of 3D NAND flash chips to be vertically stacked. Compared to 3D NAND at 96 layers, this density breakthrough greatly improves storage efficiency, and its built-in DRAM cache allows faster access. Applied with 30µ" gold finger PCB and Corner Bond technology, the MTE710T is fully tested in-house to guarantee reliability in mission-critical applications, boasting an endurance rating of 3K Program/Erase cycles and an extended operating temperature ranging from -20℃~75℃. Transcend also offers the MTE710T-I with wide temperature (-40℃ ~ 85℃) capabilities to ensure sustained functionality and optimal reliability. Supports NVM commandSLC caching technologyDynamic thermal throttlingBuilt-in LDPC ECC (Error Correction Code) functionalityAdvanced Global Wear-Leveling and Block management for reliabilityAdvanced Garbage CollectionSupports S.M.A.R.T. function to conduct health monitoring, analysis, and reporting for storage devicesTRIM command for better performanceFull drive encryption with Advanced Encryption Standard (AES) (optional)Compliant with RoHS 2.0 standardsCompliant with PCI Express specification 3.1Compliant with NVM Express specification 1.4Space-saving M.2 form factor (80mm) – ideal for mobile computing devicesPCIe Gen 4 x4 interfaceDDR4 DRAM Cache embeddedEndurance: 3K P/E cycles (Program/Erase cycles) guaranteedProducts specificationsAttribute nameAttribute valueSSD usage tag4.6 WWidth0.353 ozHeight0.141"TBW rating1700Power consumption (average)4.6 WDepth0.866"Weight0.353 ozSSD capacity256 GBPCI Express interface data lanesx4NVMe version1.4Technical detailsSustainability certificatesCE, RoHSFeaturesWrite speed3200 MB/sRandom write (4KB)560000 IOPSComponent forPCECCYMean time between failures (MTBF)5500000 hMemory type3D NANDRead speed3800 MB/sRandom read (4KB)500000 IOPSS.M.A.R.T. supportYNVMeYTRIM supportYSSD form factorM.2Ports & interfacesInterfacePCI Express 4.0PowerPower consumption (idle)1.6 WOperating voltage3.3 VOperational conditionsOperating temperature (T-T)-20 - 75 °COperating vibration20 GStorage temperature (T-T)-55 - 85 °COperating relative humidity (H-H)5 - 95 %Storage relative humidity (H-H)5 - 95 %Operating shock1500 GYour name * Your email * Enquiry * SubmitProducts specificationsAttribute nameAttribute valueSSD usage tag4.6 WWidth0.353 ozHeight0.141"TBW rating1700Power consumption (average)4.6 WDepth0.866"Weight0.353 ozSSD capacity256 GBPCI Express interface data lanesx4NVMe version1.4Technical detailsSustainability certificatesCE, RoHSFeaturesWrite speed3200 MB/sRandom write (4KB)560000 IOPSComponent forPCECCYMean time between failures (MTBF)5500000 hMemory type3D NANDRead speed3800 MB/sRandom read (4KB)500000 IOPSS.M.A.R.T. supportYNVMeYTRIM supportYSSD form factorM.2Ports & interfacesInterfacePCI Express 4.0PowerPower consumption (idle)1.6 WOperating voltage3.3 VOperational conditionsOperating temperature (T-T)-20 - 75 °COperating vibration20 GStorage temperature (T-T)-55 - 85 °COperating relative humidity (H-H)5 - 95 %Storage relative humidity (H-H)5 - 95 %Operating shock1500 GProduct tags (50229)